Thus, the LED thin layers grown on the substrates lead to many challenges to develop device applications, especially micro-LED display.Īlthough these drawbacks can be resolved by removing the substrates, it is challenging due to its strong interfacial fracture toughness with mixed covalent-ionic bonds. In general, a micrometer thick epitaxial layer for InGaN-based light-emitting diodes (LEDs) are grown on more than hundred micrometer thick sapphire substrates at high temperature (> 1000 ☌).Īn important point is that the inevitable use of the thick sapphire substrates has led to a lot of shortcomings such as the insulative property, low thermal conductivity, inflexibility, etc. The main purpose of this research was to develop an unprecedented exfoliation technique of large-scale and high-quality III-nitride alloys for practical use in the semiconductor industry.
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